The effect of zn on inp surfaces during diffusion
Identifieur interne : 000567 ( Main/Exploration ); précédent : 000566; suivant : 000568The effect of zn on inp surfaces during diffusion
Auteurs : RBID : ISTEX:11664_1987_Article_BF02655481.pdfEnglish descriptors
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Abstract
The nature of the defects that form on the surface of InP during the zinc diffusion process has been investigated. They are typically found to be composed of a crystalline inclusion and an associated indium droplet. SEM/EDX, X-ray and TEM studies show that the crystalline inclusions are composed of Zn3P2, which has an epitaxial relationship to the InP surface. A mechanism for the formation of the defects is proposed and a new all metallic diffusion source is described. This source, which is based on Zn-Ga-In-Cd mixtures, enables the defects to be largely eliminated.
DOI: 10.1007/BF02655481
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<author><name>A. J. Springthorpe</name>
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<author><name>A. Margittai</name>
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<author><name>F. R. Shepherd</name>
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<author><name>R. A. Bruce</name>
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<author><name>G. M. Smith</name>
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<front><div type="abstract" xml:lang="eng">The nature of the defects that form on the surface of InP during the zinc diffusion process has been investigated. They are typically found to be composed of a crystalline inclusion and an associated indium droplet. SEM/EDX, X-ray and TEM studies show that the crystalline inclusions are composed of Zn3P2, which has an epitaxial relationship to the InP surface. A mechanism for the formation of the defects is proposed and a new all metallic diffusion source is described. This source, which is based on Zn-Ga-In-Cd mixtures, enables the defects to be largely eliminated.</div>
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<abstract lang="eng">The nature of the defects that form on the surface of InP during the zinc diffusion process has been investigated. They are typically found to be composed of a crystalline inclusion and an associated indium droplet. SEM/EDX, X-ray and TEM studies show that the crystalline inclusions are composed of Zn3P2, which has an epitaxial relationship to the InP surface. A mechanism for the formation of the defects is proposed and a new all metallic diffusion source is described. This source, which is based on Zn-Ga-In-Cd mixtures, enables the defects to be largely eliminated.</abstract>
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<topic>InP</topic>
<topic>Zinc diffusion</topic>
<topic>Surface defects</topic>
<topic>TEM studies</topic>
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<originInfo><dateIssued encoding="w3cdtf">1987-05-01</dateIssued>
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<topic>Electronics and Microelectronics, Instrumentation</topic>
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